Modeling and Simulation of nanoscale FINFET
Implementation plan:
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Step 1: Initially, we construct a 3D Silicon FinFET structures design at 30nm and 20nm .
Step 2: Then, we simulate the model high temperature (473K) to analyze and collect electrical data using ATLAS.
Step 3: Then, we detect critical regions like channel, fin, and gate oxide using accurate mesh configration.
Step 4: Next, we optimize gate dielectric thickness, work function and apply halo doping to control DIBL.
Step 5: Next, we extract Vth, Id, gm, and DIBL values using output logs for comparative analysis .
Step 6: Finally, we plot performance for the following metrics:
6.1 : Time Vs Voltage (V)
6.2 : Time Vs Temperature (°C)
6.3 : Time Vs. Power (Units)
6.4 : Time Vs Distillate (kg/sec)
Software Requirements:
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1. Development Tool: Matlab-R2023a or above
2. Operating System: Windows 10 (64-bit) or above
Note
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1) If the plan does not meet your requirements, provide detailed steps, parameters, models, or expected results in advance. Once implemented, changes won’t be possible without prior input; otherwise, we’ll proceed as per our implementation plan.
2) If the plan satisfies your requirement, Please confirm with us.
3) Project based on Simulation only, not a real time project.
4) Please understand that any modifications made to the confirmed implementation plan will not be made after the project development.
